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Creators/Authors contains: "Mou, S"

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  1. ; ; ; ; ; ; (, Science Direct)
    Free, publicly-accessible full text available October 1, 2026
  2. ; ; ; ; ; ; ; ; ; ; et al (, Applied Physics Letters)
    We report controlled silicon doping of Ga2O3 grown in plasma-assisted molecular beam epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier density, leading to over 5-orders of magnitude change in the electrical resistivity. Room temperature mobilities >100  cm2/V s are achieved, with a peak value >125  cm2/V s at a doping density of low-1017/cm3. Temperature-dependent Hall effect measurements exhibit carrier freeze out for samples doped below the Mott criterion. A mobility of 390  cm2/V s is observed at 97  K. 
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